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| AP15T03H/J Advanced Power Electronics Corp. Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 80m 12A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15T03J) is available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 20 12 6.4 50 12.5 0.1 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 10 110 Units /W /W Data & specifications subject to change without notice 200601041 AP15T03H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.02 7 4 1.4 2.4 6 22 11 2.4 280 70 47 1.1 Max. Units 80 100 3 1 25 100 7 450 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA VGS=10V, ID=8A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=8A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=8A VDS=24V VGS=4.5V VDS=15V ID=8A RG=3.3,VGS=10V RD=1.88 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=8A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/s Min. - Typ. 17 7 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP15T03H/J 35 21 30 TC=25 C o 10V 7.0V 18 T C =150 o C 10V 7.0V 5.0V 25 ID , Drain Current (A) 15 20 ID , Drain Current (A) 5.0V 4.5V 12 4.5V 9 15 10 6 5 V G =3.0V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 V G =3.0V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 76 1.6 70 ID=5A T C =25 C o 64 Normalized R DS(ON) 1.4 I D =8A V G =10V RDS(ON) (m ) 1.2 58 1.0 52 0.8 46 40 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 8 IS(A) T j =150 o C 4 T j =25 o C Normalized VGS(th) (V) 6 1.5 1.0 2 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP15T03H/J f=1.0MHz 14 1000 ID=8A 12 VGS , Gate to Source Voltage (V) 10 V DS =1 6 V V DS =20V V DS =24V C (pF) 100 C iss 8 6 C oss C rss 4 2 0 0 2 4 6 8 10 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 10 0.2 0.1 ID (A) 0.1 0.05 1ms 1 0.02 PDM T c =25 o C Single Pulse 0.1 0.1 1 10 10ms 100ms DC t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 100 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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